PART |
Description |
Maker |
AM29LV017D-120WCI AM29LV017D-120EC AM29LV017D-120W |
MOSFET; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:93A; On Resistance, Rds(on):5.7mohm; Rds(on) Test Voltage, Vgs:10V; Leaded Process Compatible:No; Package/Case:DPAK; Peak Reflow Compatible (260 C):No RoHS Compliant: No MOSFET; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:93A; On-Resistance, Rds(on):5.7mohm; Rds(on) Test Voltage, Vgs:10V; Continuous Drain Current - 100 Deg C:66A; Continuous Drain Current - 25 Deg C:93A RoHS Compliant: Yes x8 Flash EEPROM 20V Single N-Channel HEXFET Power MOSFET in a I-Pak package 20V Single N-Channel HEXFET Power MOSFET in a D-Pak package x8闪存EEPROM
|
Advanced Linear Devices, Inc.
|
PST993 PST993C PST993D PST993E PST993F PST993G PST |
MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-20V; Continuous Drain Current, Id:-2.2A; On-Resistance, Rds(on):0.1ohm; Rds(on) Test Voltage, Vgs:-4.5V; Package/Case:SOT-23; Leaded Process Compatible:No MOSFET, P, SOT-23; Transistor type:MOSFET; Current, Id cont:2.2A; Resistance, Rds on:0.1R; Voltage, Vgs Rds on measurement:4.5V; Case style:SOT-23 (TO-236); Current, Id max:2.2A; Current, Idm pulse:10A; Marking, SMD:L1; Pins, No. RoHS Compliant: Yes MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:2.1A; On-Resistance, Rds(on):0.085ohm; Rds(on) Test Voltage, Vgs:4.5V; Package/Case:SOT-23; Leaded Process Compatible:No System Reset
|
MITSUMI ELECTRIC CO LTD ETC[ETC] Mitsumi Electronics, Corp.
|
IRFF120 IRFF121 IRFF122 IRFF123 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 5.0A. N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 5.0A. N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 50V. Continuous drain current 6.0A. N-CHANNEL ENHANCEMENT-MODE POWER MOS FIELD-EFFECT TRANSISTORS
|
General Electric Solid State GE Solid State
|
HCS05DMSR FN3557 HCS05MS HCS05D HCS05HMSR HCS05K H |
Inverter, Hex, Open Drain, Rad-Hard, High-Speed, CMOS, Logic From old datasheet system JFET-N-CHANNEL SWITCH Radiation Hardened Hex Inverter with Open Drain HC/UH SERIES, HEX 1-INPUT INVERT GATE, UUC14 JFET; Transistor Polarity:N Channel; Breakdown Voltage, V(br)gss:-30V; Zero Gate Voltage Drain Current Min, Idss:50mA; Gate-Source Cutoff Voltage Max, Vgs(off):-10V; Current Rating:50mA; Voltage Rating:30V
|
INTERSIL[Intersil Corporation] Intersil, Corp. HARRIS SEMICONDUCTOR
|
ST662 ST662A ST662AB ST662ABD ST662ABN ST662AC ST6 |
From old datasheet system DC-DC CONVERTER FROM 5V TO 12V, 0.03A FOR FLASH MEMORY PROGRAMMING SUPPLY MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:40V; Continuous Drain Current, Id:14A; On-Resistance, Rds(on):9mohm; Rds(on) Test
|
http:// STMICROELECTRONICS[STMicroelectronics] 意法半导
|
2SK803 |
Drain Current ?ID=8A@ TC=25C
|
Inchange Semiconductor ...
|
2SK1662 |
Drain Current ?ID= 3A@ TC=25C
|
Inchange Semiconductor ...
|
2SK1600 |
Drain Current ?ID= 3A@ TC=25C
|
Inchange Semiconductor ...
|
2SK1602 |
Drain Current ?ID= 2.8A@ TC=25C
|
Inchange Semiconductor ...
|
2SK1211 |
Drain Current ?ID=2.5A@ TC=25C
|
Inchange Semiconductor ...
|
2SK1463 |
Drain Current ?ID=4.5A@ TC=25C
|
Inchange Semiconductor ...
|